IndiumV3, Main, Repository, bibRecord, 003E30

Investigation of the terahertz emission characteristics of MBE-grown GaAs-based nanostructures

Identifieur interne : 003E30 ( Main/Repository ); précédent : 003E29; suivant : 003E31

Investigation of the terahertz emission characteristics of MBE-grown GaAs-based nanostructures

Auteurs : RBID : Pascal:10-0256609

Descripteurs français

Pascal (Inist)
- Laser pulsé, Epitaxie jet moléculaire, Domaine fréquence THz, Domaine temps fs, Nanostructure, Point quantique, Hétérostructure, Semiconducteur III-V, Gallium Arséniure, Composé ternaire, Aluminium Arséniure, Composé binaire, Indium Arséniure, Arséniure d'aluminium, Hétérojonction, Matériau optique, GaAs, InAs/GaAs, InAs, As Ga, As In, AlGaAs, 0130C, 4270.

English descriptors

KwdEn :
- Aluminium Arsenides, Aluminium arsenides, Binary compounds, Gallium Arsenides, Heterojunctions, Heterostructures, III-V semiconductors, Indium Arsenides, Molecular beam epitaxy, Nanostructures, Optical materials, Pulsed lasers, Quantum dots, THz range, Ternary compounds, fs range.

Abstract

We report experimental work on the terahertz emission characteristics of InAs/GaAs quantum dot (QD) structures and GaAs/AlGaAs modulation-doped heterojunctions (MDH's), excited by femtosecond laser. Results showed that the terahertz emission from MDH's can provide information on the GaAs/AlGaAs interface quality while the QD structures have the potential for being intense terahertz emitters: rivaling the emission intensity of p-type bulk InAs.

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Pascal:10-0256609

Le document en format XML

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<author><name>PHAM HONG MINH</name>
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<author><name sortKey="Bailon Somintac, Michelle" uniqKey="Bailon Somintac M">Michelle Bailon-Somintac</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>National Institute of Physics, University of the Philippines</s1>
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<author><name sortKey="Somintac, Armando" uniqKey="Somintac A">Armando Somintac</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>National Institute of Physics, University of the Philippines</s1>
<s2>Diliman, Quezon City 1101</s2>
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<author><name sortKey="Defensor, Michael" uniqKey="Defensor M">Michael Defensor</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>National Institute of Physics, University of the Philippines</s1>
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<author><name sortKey="Gabayno, Jacqueline" uniqKey="Gabayno J">Jacqueline Gabayno</name>
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<author><name sortKey="Awitan, Fritz Christian B" uniqKey="Awitan F">Fritz Christian B. Awitan</name>
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<author><name sortKey="Jaculbia, Rafael B" uniqKey="Jaculbia R">Rafael B. Jaculbia</name>
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<author><name sortKey="Garcia, Alipio" uniqKey="Garcia A">Alipio Garcia</name>
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<author><name sortKey="Ponseca, Carlito Jr" uniqKey="Ponseca C">Carlito Jr Ponseca</name>
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<author><name sortKey="Salvador, Arnel" uniqKey="Salvador A">Arnel Salvador</name>
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<author><name sortKey="Sarukura, Nobuhiko" uniqKey="Sarukura N">Nobuhiko Sarukura</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka</s1>
<s2>Suita, Osaka 565-0871</s2>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium Arsenides</term>
<term>Aluminium arsenides</term>
<term>Binary compounds</term>
<term>Gallium Arsenides</term>
<term>Heterojunctions</term>
<term>Heterostructures</term>
<term>III-V semiconductors</term>
<term>Indium Arsenides</term>
<term>Molecular beam epitaxy</term>
<term>Nanostructures</term>
<term>Optical materials</term>
<term>Pulsed lasers</term>
<term>Quantum dots</term>
<term>THz range</term>
<term>Ternary compounds</term>
<term>fs range</term>
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<term>Epitaxie jet moléculaire</term>
<term>Domaine fréquence THz</term>
<term>Domaine temps fs</term>
<term>Nanostructure</term>
<term>Point quantique</term>
<term>Hétérostructure</term>
<term>Semiconducteur III-V</term>
<term>Gallium Arséniure</term>
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<term>Aluminium Arséniure</term>
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<term>Indium Arséniure</term>
<term>Arséniure d'aluminium</term>
<term>Hétérojonction</term>
<term>Matériau optique</term>
<term>GaAs</term>
<term>InAs/GaAs</term>
<term>InAs</term>
<term>As Ga</term>
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<front><div type="abstract" xml:lang="en">We report experimental work on the terahertz emission characteristics of InAs/GaAs quantum dot (QD) structures and GaAs/AlGaAs modulation-doped heterojunctions (MDH's), excited by femtosecond laser. Results showed that the terahertz emission from MDH's can provide information on the GaAs/AlGaAs interface quality while the QD structures have the potential for being intense terahertz emitters: rivaling the emission intensity of p-type bulk InAs.</div>
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<fA08 i1="01" i2="1" l="ENG"><s1>Investigation of the terahertz emission characteristics of MBE-grown GaAs-based nanostructures</s1>
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<fA09 i1="01" i2="1" l="ENG"><s1>NMDT-NGPC: Selected papers from the Conference on New Materials Design Technology for the Next Generation of Performed Componentes, Algeria, 18-20 may 2009</s1>
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<fA11 i1="03" i2="1"><s1>ESTACIO (Elmer)</s1>
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<fA14 i1="01"><s1>Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka</s1>
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<fA14 i1="02"><s1>National Institute of Physics, University of the Philippines</s1>
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<fA14 i1="04"><s1>Molecular Photoscience Research Center, Kobe University</s1>
<s2>Nada, Kobe 657-8501</s2>
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<fC01 i1="01" l="ENG"><s0>We report experimental work on the terahertz emission characteristics of InAs/GaAs quantum dot (QD) structures and GaAs/AlGaAs modulation-doped heterojunctions (MDH's), excited by femtosecond laser. Results showed that the terahertz emission from MDH's can provide information on the GaAs/AlGaAs interface quality while the QD structures have the potential for being intense terahertz emitters: rivaling the emission intensity of p-type bulk InAs.</s0>
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<s5>50</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>50</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Gallium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Gallium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>52</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>52</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Aluminium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>53</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Aluminium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>53</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Composé binaire</s0>
<s5>54</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Binary compounds</s0>
<s5>54</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Indium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>55</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Indium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>55</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Arséniure d'aluminium</s0>
<s2>NK</s2>
<s5>61</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Aluminium arsenides</s0>
<s2>NK</s2>
<s5>61</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Hétérojonction</s0>
<s5>62</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Heterojunctions</s0>
<s5>62</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Matériau optique</s0>
<s5>63</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Optical materials</s0>
<s5>63</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>GaAs</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>InAs/GaAs</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>InAs</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>As Ga</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>As In</s0>
<s4>INC</s4>
<s5>76</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>AlGaAs</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>0130C</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>4270</s0>
<s4>INC</s4>
<s5>85</s5>
</fC03>
<fN21><s1>172</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>Conference on New Materials Design Technology for the Next Generation of Performed Componentes (NMDT-NGPC)</s1>
<s3>Algiers DZA</s3>
<s4>2009-05-18</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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   |texte=   Investigation of the terahertz emission characteristics of MBE-grown GaAs-based nanostructures
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Investigation of the terahertz emission characteristics of MBE-grown GaAs-based nanostructures

Investigation of the terahertz emission characteristics of MBE-grown GaAs-based nanostructures

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